Articles in peer reviewed journals
F. Roccaforte, F. Giannazzo, F. Greco, Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices, Micro 2(1), 23-53 (2022).
R. Lo Nigro, P. Fiorenza, G. Greco, E. Schilirò, F. Roccaforte, Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices, Materials 15, 830 (2022).
K. Grabianska, R. Kucharski, T. Sochacki, J.L. Weyher, M. Iwinska, I. Grzegory, M. Bockowski, On Stress-Induced Polarization Effect in Ammonothermally Grown GaN, Crystals 12, 554 (2022).
M. Bockowski, I. Grzegory, Recent progress in crystal growth of bulk GaN, Acta Physica Polonica A, 141 (3), 167-174 (2022).
Publications in Conference Proceedings
C. Elias, Y. Cordier, M. Hugues, Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScxAl1-xN alloy on GaN, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), May 3-6, 2022, OP37-OP38.
C. Mauduit, T. Slimani Tlemcani, A. Yvon, E. Collard, M. Charles, R. Gwoziecki, D. Alquier, Alternatives to Standard Ni/Au Stack for Low Resistance p-GaN Ohmic Contacts, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), May 3-6, 2022, OP82-OP83.
F. Roccaforte, G. Greco, F. Giannazzo, P. Fiorenza, S. Di Franco, P-M. Coulon, E. Frayssinet, Y. Cordier, Study of Ni Schottky barrier on GaN epilayers grown on bulk substrates, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), May 3-6, 2022, OP84-OP85.
M. Fregolent, G. Munari, T. Bordignon, C. De Santi, E. Bahat Treidel, O. Hilt, J Würfl, G. Meneghesso, E. Zanoni, M. Meneghini, Deep levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), OP110-OP111.
G. Greco, P. Fiorenza, F. Giannazzo, M. Moschetti, C. Miccoli, F. Iucolano, F. Roccaforte, Electron and hole trapping in the threshold voltage instability of normally-off p GaN-gate HEMTs, Proc. of 45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE/EXMATEC 2022), Ponta Delgada, Sao Miguel Island, Azores (Portugal), OP119-OP118.
S. Pennisi. F. Pulvirenti, K. Samperi, Frequency Compensation Scheme for a Full GaN OpAmp driving 1-nF load, Proc. of the 55th IEEE International Symposium on Circuits and Systems (ISCAS 2022), Austin, TX (USA), May 28 – June 1, 2022, pp. 2042-2046.
Other publications
L. Liggio, The material of the future, Platinum on-line, pag. 107, March 2022.