Relevance and impact

GaN4AP project will create a strong European competences with regard to GaN-based devices technology. This will start from an outstanding base of competences ranging from materials development and analysis along the performance-tests of devices up to the system development and performance with new devices based on wide band gap semiconductors within one and the same institute, which is a uniquely rare constellation.

This project will be able to strongly support the European industry in their research and development activities for increasing the reliability and yield of production processes for GaN on Si power devices, the exploitation of methods for advanced metrology and novel devices architecture, and at the simultaneous evaluation of the envisioned applications by the building of challenging demonstrators.

It is also expected that the pivotal role played by power electronics will create a virtuous cycle also in terms of new and dedicated University curricula to attract our students and help compete on a par with global rivals.

This project has received funding from the Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU), under grant agreement No.101007310. This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation programme, and Italy, Germany, France, Poland, Czech Republic, Netherlands.