Technical inovation

The project will significantly advance GaN technology by developing:

  1. Innovative Power Electronic Systems
  2. Innovative materials
  3. New HEMTs device architectures
  4. Intelligent and integrated GaN-base circuits solutions

This project has received funding from the Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU), under grant agreement No.101007310. This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation programme, and Italy, Germany, France, Poland, Czech Republic, Netherlands.